国家硅基LED工程技术研究中心

潘拴,博士,副研究员

基本情况:

潘拴,博士、副研究员,山东博兴人,南昌大学赣江青年学者。2003年2009年于中国科学技术大学分别学士、博士学位。2009年-2010年在香港中文大学物理系从事研究工作。2012年加入南昌大学国家硅基LED工程技术研究中心。

研究方向:

半导体发光材料及器件的表征光电性能研究。

联系方式:

电话:0791-88317017

邮箱:panshuan@ncu.edu.cn

承担课题情况:

主持完成国家自然科学基金青年基金项目氮化镓基LED材料的二次离子质谱定量分析;项目号 21405076;经费25万元;执行年限2015.1-2017.12

发表论文情况:

1.Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs, Chen Xu, Changda Zheng*, Xiaoming Wu, Shuan Pan, Xingan Jiang, Junlin Liu and Fengyi Jiang, Journal of Semiconductors2019, 40(5), 052801

2.Efficient InGaN-based yellow-light-emitting diodesFengyi Jiang*, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, and Junlin Liu, Photonics Research, 2019, 7(2), 144-148

3.Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates, Qing-feng Wu, Sheng Cao*, Chun-lan Mo, Jian-li Zhang, Xiao-lan Wang, Zhi-jue Quan, Chang-da Zheng, Xiao-ming Wu, Shuan Pan, Guang-xu Wang, 《中国物理快报(英文版)》,2018,0999-103

4.Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer, Xixia Tao, Junlin Liu*, Jianli Zhang, Chunlan Mo, Longquan Xu, Jie Ding, Guangxu Wang, Xiaolan Wang, Xiaoming Wu, Zhijue Quan, Shuan Pan, Fang Fang, and Fengyi Jiang,Optical Materials Express              , 2019,8(5),1221-1230

5. Effects of the number of wells on the performance of greenInGaN/GaN LEDs with V-shape pits grown on Si substrates, Qingfeng Wu, Jianli Zhang*, Chunlan Mo, Xiaolan Wang, Zhijue Quan, Xiaoming Wu, Shuan Pan, Guangxu Wang, Junlin Liu, Fengyi Jiang, Superlattices and Microstructures, 2018,114, 89-96

6.The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence, Wei-Jing Qi, Long-Quan Xu*, Chun-Lan Mo, Xiao-Lan Wang, Jie Ding, Guang-Xu Wang, Shuan Pan, Jian-Li Zhang, Xiao-Ming Wu, Jun-Lin Liu, Feng-Yi Jiang, CHIN. PHYS. LETT.2017, 34(7), 077301

7.Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substratesWeijing Qi, Jianli Zhang*, Chunlan Mo, Xiaolan Wang, Xiaoming Wu, Zhijue Quan, Guangxu Wang, Shuan Pan, Fang Fang, Junlin Liu, and Fengyi JiangJounal of Applied Physics,2017, 122, 084504

8. InGaN/GaN超晶格厚度对Si衬底GaN基蓝光发光二极管光电性能的影响,齐维靖,张萌*,潘拴,王小兰,张建立,江风益,《物理学报》,2016, 65( 7), 077801

9.Status of GaN-based green light-emitting diodes, Liu Jun-Lin, Zhang Jian-Li *, Wang Guang-Xu, Mo Chun-Lan, Xu Long-Quan, Ding Jie, Quan Zhi-Jue, Wang Xiao-Lan, Pan Shuan, Zheng Chang-Da, Wu Xiao-Ming, Fang Wen-Qing, Jiang Feng-Yi, Chin. Phys. B, 2015,24,(6),067804

10.硅衬底高光效GaN 基蓝色发光二极管;江风益, 刘军林* , 王立, 熊传兵, 方文卿, 莫春兰, 汤英文, 王光绪, 徐龙权,丁杰, 王小兰, 全知觉, 张建立, 张萌, 潘拴, 郑畅达; 中国科学:物理学 力学 天文学;2015,45(6),067302